Publication detail

Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis

ČECHAL, J. MATLOCHA, T. POLČÁK, J. KOLÍBAL, M. TOMANEC, O. KALOUSEK, R. DUB, P. ŠIKOLA, T.

Original Title

Type

journal article - other

Language

English

Original Abstract

Deposition and oxidation of metallic gallium droplets on Si(111) was studied by angle resolved X-ray photoelectron spectroscopy. Two gallium peaks - Ga 3d and Ga 2p - were simultaneously measured in order to get an advantage of different inelastic mean free paths of photoelectrons from these two energy levels differing in binding energy by 1100 eV. Together with the angular dependent data it enhances the precision of the size characterization of Ga droplets and oxide thickness determination. A model for the calculation of theoretical intensities based on an ellipsoidal shape of droplets is presented and a simple procedure for estimation of droplet height and actual surface coverage based on measurement on a single emission angle is suggested.

Keywords

X-ray photoelectron spectroscopy, XPS; Gallium, Ga; Gallium Oxide, Ga2O3; Surface structures; Models; Calculations

Authors

ČECHAL, J.; MATLOCHA, T.; POLČÁK, J.; KOLÍBAL, M.; TOMANEC, O.; KALOUSEK, R.; DUB, P.; ŠIKOLA, T.

RIV year

2009

Released

30. 1. 2009

ISBN

0040-6090

Periodical

Thin Solid Films

Year of study

517

Number

State

Kingdom of the Netherlands

Pages from

1928

Pages to

1934

Pages count

BibTex

@article{BUT48893,
  author="Jan {Čechal} and Tomáš {Matlocha} and Josef {Polčák} and Miroslav {Kolíbal} and Ondřej {Tomanec} and Radek {Kalousek} and Petr {Dub} and Tomáš {Šikola}",
  title="Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis",
  journal="Thin Solid Films",
  year="2009",
  volume="517",
  number="6",
  pages="1928--1934",
  issn="0040-6090"
}