Detail publikace

Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis

ČECHAL, J. MATLOCHA, T. POLČÁK, J. KOLÍBAL, M. TOMANEC, O. KALOUSEK, R. DUB, P. ŠIKOLA, T.

Originální název

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Deposition and oxidation of metallic gallium droplets on Si(111) was studied by angle resolved X-ray photoelectron spectroscopy. Two gallium peaks - Ga 3d and Ga 2p - were simultaneously measured in order to get an advantage of different inelastic mean free paths of photoelectrons from these two energy levels differing in binding energy by 1100 eV. Together with the angular dependent data it enhances the precision of the size characterization of Ga droplets and oxide thickness determination. A model for the calculation of theoretical intensities based on an ellipsoidal shape of droplets is presented and a simple procedure for estimation of droplet height and actual surface coverage based on measurement on a single emission angle is suggested.

Klíčová slova

X-ray photoelectron spectroscopy, XPS; Gallium, Ga; Gallium Oxide, Ga2O3; Surface structures; Models; Calculations

Autoři

ČECHAL, J.; MATLOCHA, T.; POLČÁK, J.; KOLÍBAL, M.; TOMANEC, O.; KALOUSEK, R.; DUB, P.; ŠIKOLA, T.

Rok RIV

2009

Vydáno

30. 1. 2009

ISSN

0040-6090

Periodikum

Thin Solid Films

Ročník

517

Číslo

Stát

Nizozemsko

Strany od

1928

Strany do

1934

Strany počet

BibTex

@article{BUT48893,
  author="Jan {Čechal} and Tomáš {Matlocha} and Josef {Polčák} and Miroslav {Kolíbal} and Ondřej {Tomanec} and Radek {Kalousek} and Petr {Dub} and Tomáš {Šikola}",
  title="Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis",
  journal="Thin Solid Films",
  year="2009",
  volume="517",
  number="6",
  pages="1928--1934",
  issn="0040-6090"
}