Publication detail

Chemistry of plasma-polymerized vinyltriethoxysilane controlled by deposition conditions

ČECH, V. ZEMEK, J. PEŘINA, V.

Original Title

Type

journal article - other

Language

English

Original Abstract

Plasma-polymerized thin films of vinyltriethoxysilane were deposited on IR-transparent silicon wafers using plasma-enhanced chemical vapor deposition at a wide range of RF pulsed power (0.05 - 25 W). The deposited films were analyzed by spectroscopic techniques (RBS, ERDA, XPS, and FTIR) in order to compare their chemical structure and elemental composition, which were correlated with plasma products monitored by mass spectroscopy. Thin polymer films deposited at 0.05 W were SiO-rich (55 at.-%), while those prepared at 25 W were dominated by carbon 66 at.-%. The organic/inorganic character (C/Si ratio) of plasma polymer varied widely, from 2.5 to 7.3 with enhanced power. The chemical structure of the polymer network and side groups was also controlled by the effective power. Chemical analyses enabled us to gain an idea of the chemical structure of the films.

Keywords

ESCA/XPS; FT-IR; plasma-enhanced chemical vapor deposition (PE-CVD); Rutherford back-scattering (RBS); thin films

Authors

ČECH, V.; ZEMEK, J.; PEŘINA, V.

RIV year

2008

Released

22. 12. 2008

ISBN

1612-8850

Periodical

Plasma Processes and Polymers

Year of study

Number

State

Federal Republic of Germany

Pages from

745

Pages to

752

Pages count

BibTex

@article{BUT48293,
  author="Vladimír {Čech} and Josef {Zemek} and Vratislav {Peřina}",
  title="Chemistry of plasma-polymerized vinyltriethoxysilane controlled by deposition conditions",
  journal="Plasma Processes and Polymers",
  year="2008",
  volume="5",
  number="8",
  pages="745--752",
  issn="1612-8850"
}