Detail publikace

Chemistry of plasma-polymerized vinyltriethoxysilane controlled by deposition conditions

ČECH, V. ZEMEK, J. PEŘINA, V.

Originální název

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Plasma-polymerized thin films of vinyltriethoxysilane were deposited on IR-transparent silicon wafers using plasma-enhanced chemical vapor deposition at a wide range of RF pulsed power (0.05 - 25 W). The deposited films were analyzed by spectroscopic techniques (RBS, ERDA, XPS, and FTIR) in order to compare their chemical structure and elemental composition, which were correlated with plasma products monitored by mass spectroscopy. Thin polymer films deposited at 0.05 W were SiO-rich (55 at.-%), while those prepared at 25 W were dominated by carbon 66 at.-%. The organic/inorganic character (C/Si ratio) of plasma polymer varied widely, from 2.5 to 7.3 with enhanced power. The chemical structure of the polymer network and side groups was also controlled by the effective power. Chemical analyses enabled us to gain an idea of the chemical structure of the films.

Klíčová slova

ESCA/XPS; FT-IR; plasma-enhanced chemical vapor deposition (PE-CVD); Rutherford back-scattering (RBS); thin films

Autoři

ČECH, V.; ZEMEK, J.; PEŘINA, V.

Rok RIV

2008

Vydáno

22. 12. 2008

ISSN

1612-8850

Periodikum

Plasma Processes and Polymers

Ročník

Číslo

Stát

Spolková republika Německo

Strany od

745

Strany do

752

Strany počet

BibTex

@article{BUT48293,
  author="Vladimír {Čech} and Josef {Zemek} and Vratislav {Peřina}",
  title="Chemistry of plasma-polymerized vinyltriethoxysilane controlled by deposition conditions",
  journal="Plasma Processes and Polymers",
  year="2008",
  volume="5",
  number="8",
  pages="745--752",
  issn="1612-8850"
}