Publication detail

Stability of hydrogen-terminated silicon surface under ambient atmosphere

KOLÍBAL, M. ČECHAL, J. BARTOŠÍK, M. MACH, J. ŠIKOLA, T.

Original Title

Type

journal article - other

Language

English

Original Abstract

In this paper a comparative study of different wet-chemical etching procedures of vicinal Si(1 1 1) surface passivation is presented. The stability against oxidation under ambient atmosphere was studied by X-ray photoelectron spectroscopy and atomic force microscopy. The best results were achieved by the buffered HF etching and the final smoothing of the surface by hot (72 C) NH4F. The procedures consisting of a large number of etching steps were unsatisfactory, since the probability of contamination during each step was increasing. The passivated surface was stable against oxidation for at least 3 h under ambient atmosphere.

Keywords

Silicon substrates; Wet-chemical pre-treatment; Etching; Oxidation; X-ray photoelectron spectroscopy

Authors

KOLÍBAL, M.; ČECHAL, J.; BARTOŠÍK, M.; MACH, J.; ŠIKOLA, T.

RIV year

2010

Released

15. 3. 2010

ISBN

0169-4332

Periodical

Applied Surface Science

Year of study

256

Number

State

Kingdom of the Netherlands

Pages from

3423

Pages to

2426

Pages count

BibTex

@article{BUT46912,
  author="Miroslav {Kolíbal} and Jan {Čechal} and Miroslav {Bartošík} and Jindřich {Mach} and Tomáš {Šikola}",
  title="Stability of hydrogen-terminated silicon surface under ambient atmosphere",
  journal="Applied Surface Science",
  year="2010",
  volume="256",
  number="11",
  pages="3423--2426",
  issn="0169-4332"
}