Detail publikace

Stability of hydrogen-terminated silicon surface under ambient atmosphere

KOLÍBAL, M. ČECHAL, J. BARTOŠÍK, M. MACH, J. ŠIKOLA, T.

Originální název

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

In this paper a comparative study of different wet-chemical etching procedures of vicinal Si(1 1 1) surface passivation is presented. The stability against oxidation under ambient atmosphere was studied by X-ray photoelectron spectroscopy and atomic force microscopy. The best results were achieved by the buffered HF etching and the final smoothing of the surface by hot (72 C) NH4F. The procedures consisting of a large number of etching steps were unsatisfactory, since the probability of contamination during each step was increasing. The passivated surface was stable against oxidation for at least 3 h under ambient atmosphere.

Klíčová slova

Silicon substrates; Wet-chemical pre-treatment; Etching; Oxidation; X-ray photoelectron spectroscopy

Autoři

KOLÍBAL, M.; ČECHAL, J.; BARTOŠÍK, M.; MACH, J.; ŠIKOLA, T.

Rok RIV

2010

Vydáno

15. 3. 2010

ISSN

0169-4332

Periodikum

Applied Surface Science

Ročník

256

Číslo

Stát

Nizozemsko

Strany od

3423

Strany do

2426

Strany počet

BibTex

@article{BUT46912,
  author="Miroslav {Kolíbal} and Jan {Čechal} and Miroslav {Bartošík} and Jindřich {Mach} and Tomáš {Šikola}",
  title="Stability of hydrogen-terminated silicon surface under ambient atmosphere",
  journal="Applied Surface Science",
  year="2010",
  volume="256",
  number="11",
  pages="3423--2426",
  issn="0169-4332"
}