Publication detail

In situ Analysis of Ga-ultra Thin Films by ToF-LEIS

KOLÍBAL, M. PRŮŠA, S. PLOJHAR, M. BÁBOR, P. POTOČEK, M. TOMANEC, O. KOSTELNÍK, P. MARKIN, S. BAUER, P. ŠIKOLA, T.

Original Title

Type

journal article - other

Language

English

Original Abstract

In the paper the ability of TOF-LEIS to monitor the growth of ultrathin Ga layers in situ is presented. The FWHM of the Ga peaks in the TOF-LEIS spectra showed a linear dependence on Ga coverage. The analysis of the Ga growth on two Si(111) substrates cleaned in two distinct ways (chemical etching and UHV thermal flashing) revealed changes in the Si peak evolution caused by different growth modes taking place on these two substrates. This has been proved by ex situ AFM measurements as well.

Keywords

low energy ion scattering; AFM; growth; gallium; silicon

Authors

KOLÍBAL, M.; PRŮŠA, S.; PLOJHAR, M.; BÁBOR, P.; POTOČEK, M.; TOMANEC, O.; KOSTELNÍK, P.; MARKIN, S.; BAUER, P.; ŠIKOLA, T.

RIV year

2006

Released

1. 8. 2006

Publisher

Elsevier

ISBN

0168-583X

Periodical

Nuclear Instruments and Methods in Physics Research B

Year of study

249

Number

1-2

State

Kingdom of the Netherlands

Pages from

318

Pages to

321

Pages count

BibTex

@article{BUT43514,
  author="Miroslav {Kolíbal} and Stanislav {Průša} and Martin {Plojhar} and Petr {Bábor} and Michal {Potoček} and Ondřej {Tomanec} and Petr {Kostelník} and S. N. {Markin} and P. {Bauer} and Tomáš {Šikola}",
  title="In situ Analysis of Ga-ultra Thin Films by ToF-LEIS",
  journal="Nuclear Instruments and Methods in Physics Research B",
  year="2006",
  volume="249",
  number="1-2",
  pages="318--321",
  issn="0168-583X"
}