Detail publikace

In situ Analysis of Ga-ultra Thin Films by ToF-LEIS

KOLÍBAL, M. PRŮŠA, S. PLOJHAR, M. BÁBOR, P. POTOČEK, M. TOMANEC, O. KOSTELNÍK, P. MARKIN, S. BAUER, P. ŠIKOLA, T.

Originální název

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

In the paper the ability of TOF-LEIS to monitor the growth of ultrathin Ga layers in situ is presented. The FWHM of the Ga peaks in the TOF-LEIS spectra showed a linear dependence on Ga coverage. The analysis of the Ga growth on two Si(111) substrates cleaned in two distinct ways (chemical etching and UHV thermal flashing) revealed changes in the Si peak evolution caused by different growth modes taking place on these two substrates. This has been proved by ex situ AFM measurements as well.

Klíčová slova

low energy ion scattering; AFM; growth; gallium; silicon

Autoři

KOLÍBAL, M.; PRŮŠA, S.; PLOJHAR, M.; BÁBOR, P.; POTOČEK, M.; TOMANEC, O.; KOSTELNÍK, P.; MARKIN, S.; BAUER, P.; ŠIKOLA, T.

Rok RIV

2006

Vydáno

1. 8. 2006

Nakladatel

Elsevier

ISSN

0168-583X

Periodikum

Nuclear Instruments and Methods in Physics Research B

Ročník

249

Číslo

1-2

Stát

Nizozemsko

Strany od

318

Strany do

321

Strany počet

BibTex

@article{BUT43514,
  author="Miroslav {Kolíbal} and Stanislav {Průša} and Martin {Plojhar} and Petr {Bábor} and Michal {Potoček} and Ondřej {Tomanec} and Petr {Kostelník} and S. N. {Markin} and P. {Bauer} and Tomáš {Šikola}",
  title="In situ Analysis of Ga-ultra Thin Films by ToF-LEIS",
  journal="Nuclear Instruments and Methods in Physics Research B",
  year="2006",
  volume="249",
  number="1-2",
  pages="318--321",
  issn="0168-583X"
}