Publication detail

The annealing effect of the silicon substrates studied by ellipsometry

ČECHALOVÁ, B. MISTRÍK, J. ČECH, V.

Original Title

Type

conference paper

Language

English

Original Abstract

As-received silicon wafers were in situ annealed up to 300 C and then cooled back to the room temperature. The effect of repeated temperature treatment was studied by means of spectroscopic ellipsometry. The ellipsometric data were analyzed in order to describe the situation after the annealing. It was shown that the annealing resulted in the removal of adsorbed impurities from the wafer surface. A detailed view on the surface situation of the substrate is beneficial for subsequent modelling and describing of deposited films.

Keywords

Ellipsometry

Authors

ČECHALOVÁ, B.; MISTRÍK, J.; ČECH, V.

RIV year

2007

Released

13. 12. 2007

Pages from

117

Pages to

120

Pages count

BibTex

@inproceedings{BUT28341,
  author="Božena {Čechalová} and Jan {Mistrík} and Vladimír {Čech}",
  title="The annealing effect of the silicon substrates studied by ellipsometry",
  booktitle="Juniormat 07",
  year="2007",
  pages="117--120"
}