Detail publikace

The annealing effect of the silicon substrates studied by ellipsometry

ČECHALOVÁ, B. MISTRÍK, J. ČECH, V.

Originální název

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

As-received silicon wafers were in situ annealed up to 300 C and then cooled back to the room temperature. The effect of repeated temperature treatment was studied by means of spectroscopic ellipsometry. The ellipsometric data were analyzed in order to describe the situation after the annealing. It was shown that the annealing resulted in the removal of adsorbed impurities from the wafer surface. A detailed view on the surface situation of the substrate is beneficial for subsequent modelling and describing of deposited films.

Klíčová slova

Ellipsometry

Autoři

ČECHALOVÁ, B.; MISTRÍK, J.; ČECH, V.

Rok RIV

2007

Vydáno

13. 12. 2007

Strany od

117

Strany do

120

Strany počet

BibTex

@inproceedings{BUT28341,
  author="Božena {Čechalová} and Jan {Mistrík} and Vladimír {Čech}",
  title="The annealing effect of the silicon substrates studied by ellipsometry",
  booktitle="Juniormat 07",
  year="2007",
  pages="117--120"
}