Low energy focused ion beam milling of silicon and germanium nanostructures

journal article - other

English

In this paper focused ion beam milling of very shallow nanostructures in silicon and germanium by low energy Ga+ ions is studied with respect to ion beam and scanning parameters. It has been found that, using low energy ions, many scanning artefacts can be avoided and, additionally, some physical effects (e.g. redeposition and ion channelling) are significantly suppressed. The structures milled with low energy ions suffer less subsurface ion beam damage (amorphization, formation of voids) and are thus more suitable for selected applications in nanotechnology.

FIB milling; Si; Ge

KOLÍBAL, M.; MATLOCHA, T.; VYSTAVĚL, T.; ŠIKOLA, T.

2011

2. 2. 2011

0957-4484

NANOTECHNOLOGY

22

10

United Kingdom of Great Britain and Northern Ireland

105304-1

105304-8

8