Publication detail
Strain mapping by Scanning Low Energy Electron Microscopy
MIKMEKOVÁ, Š. MAN, O. PANTĚLEJEV, L. HOVORKA, M. MÜLLEROVÁ, I. FRANK, L. KOUŘIL, M.
Original Title
Strain mapping by Scanning Low Energy Electron Microscopy
Type
journal article - other
Language
English
Original Abstract
The use of the scanning low energy electron microscopy (SLEEM) has been slowly making its way into the field of materials science, hampered not by limitations in the technique but rather by relative scarcity of these instruments in research institutes and laboratories. This paper reports the results obtained from an investigation of the microstructure of ultra fine-grained (UFG) copper fabricated using equal channel angular pressing (ECAP) method, namely in the as-pressed state and after annealing. SLEEM is very sensitive to the perfection of crystal lattice and using SLEEM, local strain can be effectively imaged.
Keywords
scanning low energy electron microscopy (SLEEM), contrast of crystal orientation, microscopic strain
Authors
MIKMEKOVÁ, Š.; MAN, O.; PANTĚLEJEV, L.; HOVORKA, M.; MÜLLEROVÁ, I.; FRANK, L.; KOUŘIL, M.
RIV year
2010
Released
1. 3. 2011
Publisher
Trans Tech Publications
Location
Switzerland
ISBN
1013-9826
Periodical
Key Engineering Materials (print)
Year of study
465
Number
1
State
Swiss Confederation
Pages from
338
Pages to
341
Pages count
4
BibTex
@article{BUT49965,
author="Šárka {Mikmeková} and Ondřej {Man} and Libor {Pantělejev} and Miloš {Hovorka} and Ilona {Müllerová} and Luděk {Frank} and Miloslav {Kouřil}",
title="Strain mapping by Scanning Low Energy Electron Microscopy",
journal="Key Engineering Materials (print)",
year="2011",
volume="465",
number="1",
pages="338--341",
issn="1013-9826"
}