High Domain Wall Velocity at Zero Magnetic Field Induced by Low Current Densities in Spin Valve Nanostripes

journal article - other

English

Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below 10^12 A/m2, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.

Domain Wall; Spin Valve, Motion

PIZZINI, S.; UHLÍŘ, V.; VOGEL, J.; ROUGEMAILLE, N.; LARIBI, S.; CROS, V.; JIMÉNEZ, E.; CAMARERO, J.; TIEG, C.; BONET, E.; BONFIM, M.; MATTANA, R.; DERANLOT, C.; PETROFF, F.; ULYSSE, C.; FAINI, G.; FERT, A.

2009

30. 1. 2009

1882-0778

Applied Physics Express

2

2

Japan

023003-1

023003-3

3