Publication detail

Imaging reflectometery in situ

URBÁNEK, M. SPOUSTA, J. BĚHOUNEK, T. ŠIKOLA, T.

Original Title

Type

journal article - other

Language

English

Original Abstract

An innovative method of in situ real-time optical monitoring of thin film deposition and etching is presented. In this technique, intensity maps of a thin film corresponding to a series of wavelengths selected by a monochromator 300 - 800 nm are recorded by a CCD camera. From the maps the reflectance spectra at individual points of the sample surface can be extracted. By fitting the reflectance spectra to the theoretical ones, the maps of a thin film morphology (including optical parameters) and their temporal development during technological processes can be obtained. The method was tested by in situ observation of the growth of silicon nitride and silicon oxide thin films prepared by ion beam sputtering and by the monitoring of etching of thermally grown SiO2 thin films.

Keywords

Reflectometry; Thin films; Optical characterization

Authors

URBÁNEK, M.; SPOUSTA, J.; BĚHOUNEK, T.; ŠIKOLA, T.

RIV year

2007

Released

23. 8. 2007

ISBN

0003-6935

Periodical

Applied Optics

Year of study

Number

State

United States of America

Pages from

6309

Pages to

6313

Pages count

BibTex

@article{BUT44051,
  author="Michal {Urbánek} and Jiří {Spousta} and Tomáš {Běhounek} and Tomáš {Šikola}",
  title="Imaging reflectometery in situ",
  journal="Applied Optics",
  year="2007",
  volume="46",
  number="25",
  pages="6309--6313",
  issn="0003-6935"
}