Publication detail
Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties
SALYK, O., SCHAUER, F., ZMEŠKAL, O., ZUBÍK, K., POLCER, J.
Original Title
Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties
Type
journal article - other
Language
English
Original Abstract
The deposition of a-Si:H by electron beam evaporation and ion beam hydrogenation is described. The films are characterized by density, hydrogen content and refractive index and by SIMS and AES analysis. The transport properties were determined by conductivity and photoconductivity measurements and using the temperature modulated space charge limited currents method (TM-SCLC)
Key words in English
amorphous silicon,evaporation, ion beam
Authors
SALYK, O., SCHAUER, F., ZMEŠKAL, O., ZUBÍK, K., POLCER, J.
Released
1. 1. 1987
Pages from
1435
BibTex
@article{BUT39723,
author="Ota {Salyk} and František {Schauer} and Oldřich {Zmeškal} and Karel {Zubík} and Jaroslav {Polcer}",
title="Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties",
year="1987",
volume="97&98"
}