Publication detail
Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation
ČECH, V. BRÁNECKÝ, M.
Original Title
Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation
Type
journal article in Web of Science
Language
English
Original Abstract
Lower flow rates of precursor molecules are favorable for the synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation and sufficiently high deposition rate. These deposition conditions can be used for both continuous wave (CW) and pulsed plasmas and result in higher consumption of precursor molecules, which is beneficial for industrial applications due to cost reduction. A wider range of power can be used to control the chemical and physical properties of thin-film materials based on power-dependent plasma chemistry. Hydrogenated amorphous silicon carbide films deposited in CW and pulsed plasma are used as an example. The different kinetics of film growth and the role of self-bias voltage in both types of plasma are discussed.
Keywords
degree of dissociation; nonthermal plasma; organosilicon precursors; plasma-enhanced chemical vapor deposition (PE-CVD); sticking coefficient; thin films
Authors
ČECH, V.; BRÁNECKÝ, M.
Released
23. 3. 2023
Publisher
Wiley
ISBN
1612-8869
Periodical
Plasma Processes and Polymers
Year of study
20
Number
7
State
Federal Republic of Germany
Pages from
1
Pages to
11
Pages count
11
URL
Full text in the Digital Library
BibTex
@article{BUT184061,
author="Vladimír {Čech} and Martin {Bránecký}",
title="Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation",
journal="Plasma Processes and Polymers",
year="2023",
volume="20",
number="7",
pages="1--11",
doi="10.1002/ppap.202300019",
issn="1612-8869",
url="https://onlinelibrary.wiley.com/doi/full/10.1002/ppap.202300019"
}