Publication detail

Porosity of a-CSiO:H films

ABOUALI GALEDARI, N. BRÁNECKÝ, M. ČECH, V.

Original Title

Type

abstract

Language

English

Original Abstract

Thin films of tetravinylsilane or its mixture with oxygen gas were prepared by plasma-enhanced chemical vapour deposition (PECVD) operating in pulsed mode. The oxygen-to-total-flow rate ratio (0 – 0.92) and effective power (2 – 150 W) were the only variable deposition parameters. The films deposited on silicon wafer were analyzed by infrared spectroscopy to evaluate the chemical structure of the deposited material. Infrared transmission measurements were made using a VERTEX 80 vacuum Fourier transform infrared (FTIR) spectrometer (Bruker Optics, USA) in the wavenumber range of 400 – 4000 cm-1. The assignment of IR absorption bands was carried. According to this assignment, the intensity and the area of the absorption band corresponding to CO2 vibrations increased with enhancement in oxygen flow rate and effective power up to 3 sccm and 30 W, respectively and then decreases with further increase in oxygen flow rate and effective power. Infrared spectra indicated the incorporation of CO2 gas into the thin films, which could be due to porous structure of as-prepared thin films. To confirm this assumption, GISAXS analysis (grazing-incidence small-angle scattering) was performed. According to GISAXS analysis, the pore size is 4.1 nm.

Keywords

thin film, PECVD, FTIR,porosity

Authors

ABOUALI GALEDARI, N.; BRÁNECKÝ, M.; ČECH, V.

Released

21. 11. 2019

Location

Chemie je život, Brno

Pages count

BibTex

@misc{BUT160162,
  author="Naghmeh {Aboualigaledari} and Martin {Bránecký} and Vladimír {Čech}",
  title="Porosity of a-CSiO:H films",
  year="2019",
  pages="1",
  address="Chemie je život, Brno",
  note="abstract"
}