Excitonic fine structure splitting in type-II quantum dots

journal article in Web of Science

English

Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb capping layer. We show that very small values of the fine structure splitting comparable with the natural linewidth of the excitonic transitions are achievable for realistic quantum dots despite the structural elongation and the piezoelectric field. For example, varying the capping layer thickness allows for a fine tuning of the splitting energy. The effect is explained by a strong sensitivity of the hole wave function to the quantum dot structure and a mutual compensation of the electron and hole anisotropies. The oscillator strength of the excitonic transitions in the studied quantum dots is comparable to those with a type-I confinement which makes the dots attractive for quantum communication technology as emitters of polarization-entangled photon pairs.

Quantum dots; fine structure; calculations

KŘÁPEK, V.; KLENOVSKÝ, P.; ŠIKOLA, T.

2015

25. 11. 2015

1098-0121

PHYSICAL REVIEW B

92

19

United States of America

195530-1

195530-8

8