Publication detail

Simple Method for the Determination of the Type of Charge Carriers in Semiconductors

FLORIÁN, P. POSPÍŠIL, J. ZMEŠKAL, O.

Original Title

Simple Method for the Determination of the Type of Charge Carriers in Semiconductors

Type

journal article in Scopus

Language

English

Original Abstract

The source-drain current-voltage characteristic is linear and symmetric at low voltages. The linearity and symmetry can be influenced by the electric potential of a gate electrode. Because the process is sensitive to the type of semiconductor, the method – “modified field effect transistor method” – can be used for the determination of the type of majority charge carriers. No insulating layer between the source-drain and gate electrodes is used. The effect is demonstrated on P- and N type organic semiconductors, 6-bis[5-(benzofuran-2-yl)-thiofen-2-yl]-2,5-bis(2-ethylhexyl) pyrrolo[3,4-c]pyrrole-1,4-dione [DPP(TBFu)2] and phenyl-C61-butyric acid methyl ester [PCBM], respectively.

Keywords

Field effect analysis, Charge carrier injection, Type of charge carriers, Diketopyrrolopyrrole derivative, Phenyl-C61-butyric acid methyl ester

Authors

FLORIÁN, P.; POSPÍŠIL, J.; ZMEŠKAL, O.

Released

1. 4. 2016

Publisher

Trans Tech Publications Inc

ISBN

0255-5476

Periodical

Materials Science Forum

Year of study

851

Number

4

State

Swiss Confederation

Pages from

179

Pages to

183

Pages count

5

URL

https://www.scientific.net/MSF.851.179

BibTex

@article{BUT116080,
  author="Pavel {Florián} and Jan {Pospíšil} and Oldřich {Zmeškal}",
  title="Simple Method for the Determination of the Type of Charge Carriers in Semiconductors",
  journal="Materials Science Forum",
  year="2016",
  volume="851",
  number="4",
  pages="179--183",
  doi="10.4028/www.scientific.net/MSF.851.179",
  issn="0255-5476",
  url="https://www.scientific.net/MSF.851.179"
}