Detail publikace

Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties

SALYK, O., SCHAUER, F., ZMEŠKAL, O., ZUBÍK, K., POLCER, J.

Originální název

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

The deposition of a-Si:H by electron beam evaporation and ion beam hydrogenation is described. The films are characterized by density, hydrogen content and refractive index and by SIMS and AES analysis. The transport properties were determined by conductivity and photoconductivity measurements and using the temperature modulated space charge limited currents method (TM-SCLC)

Klíčová slova v angličtině

amorphous silicon,evaporation, ion beam

Autoři

SALYK, O., SCHAUER, F., ZMEŠKAL, O., ZUBÍK, K., POLCER, J.

Vydáno

1. 1. 1987

Strany od

1435

BibTex

@article{BUT39723,
  author="Ota {Salyk} and František {Schauer} and Oldřich {Zmeškal} and Karel {Zubík} and Jaroslav {Polcer}",
  title="Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties",
  year="1987",
  volume="97&98"
}