Detail publikace

A Study of Gallium Growth on Si(111) 7x7 by SRPES

ČECHAL, J. BÁBOR, P. SPOUSTA, J. ŠIKOLA, T.

Originální název

Typ

audiovizuální tvorba

Jazyk

angličtina

Originální abstrakt

We present the results of a study of gallium growth on Si(111) 7x7 substrates by SR-PES and LEED. Using synchrotron radiation core-level spectroscopy performed at the synchrotron Elettra in Trieste we were able to get high-resolution spectra during gallium deposition. The deposition was done at three different substrate temperatures - room, low (-180 C) and enhanced (350 C). The prepared gallium layers (up to a few MLs) were gradually annealed afterwards to study gallium desorption and its structural and morphological changes. The results of our study were compared with other complementary measurements done by thermodesorption spectroscopy (TDS), LEED, TOF-LEIS and XPS. The high sensitivity and resolution of SR - PES made us possible to reveal the relations between peak shape and intensity changes on one hand and the film thickness and morphology induced by Ga growth and thermal annealing on the other hand.

Klíčová slova

Ga, Si(111), SRPES, photoelectron spectroscopy

Autoři

ČECHAL, J.; BÁBOR, P.; SPOUSTA, J.; ŠIKOLA, T.

Vydáno

25. 9. 2005

Místo

Vienna

Strany od

259

Strany do

259

Strany počet

BibTex

@misc{BUT63405,
  author="Jan {Čechal} and Petr {Bábor} and Jiří {Spousta} and Tomáš {Šikola}",
  title="A Study of Gallium Growth on Si(111) 7x7 by SRPES",
  year="2005",
  series="1",
  edition="1",
  pages="259--259",
  address="Vienna",
  note="presentation"
}