Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface

článek v časopise - ostatní, Jost

angličtina

The influence of atomic hydrogen on the Si(100) substrate with submonolayer gallium surface phases - (2x3), (2x2) and (8x1) - as well as the deposition of gallium on monohydride terminated Si(100)-(2x1)-H surface were studied by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) and compared with similar metal/Si systems. It was found that gallium deposition on the Si(100)-(2x1)-H surface at elevated temperature (400 C) leads to a complete hydrogen desorption and formation of the same gallium surface phases as on the bare Si(100)-(2x1). Exposing the Si(100) substrate with (2x3)-Ga and (2x2)-Ga surface phases to atomic hydrogen results in the formation of gallium nanoclusters, surrounded by the Si(100)-(2x1)-H surface. These clusters have more than 2 monolayers in height and cover approximately 20 - 26 % of surface, depending on the initial coverage. The results indicate that the cluster size and density may be controlled by initial Ga coverage and possibly by temperature.

Gallium, Ga; Silicon, Si(100); Hydrogen; Surface structure; Nanoclusters; Low energy electron diffraction (LEED); Synchrotron radiation photoelectron spectroscopy (SR-PES); Photoemission

MACH, J.; ČECHAL, J.; KOLÍBAL, M.; POTOČEK, M.; ŠIKOLA, T.

2008

15. 5. 2008

0039-6028

Surface Science

602

10

Nizozemsko

1898

1902

5