Detail publikace
Serial Resistance Effect on Organic Electrochemical Transistors Transconductance
MARKOVÁ, A. STŘÍTESKÝ, S. WEITER, M. VALA, M.
Originální název
Serial Resistance Effect on Organic Electrochemical Transistors Transconductance
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
Organic electrochemical transistors (OECTs) with variable electrode resistance and channel conductivity were studied. The effect of parasitic serial resistance on OECT function, especially transconductance, was evaluated. It was shown that due to the nonoptimized serial resistance, the transistors can have a transconductance lower by tens of percentage compared to the theoretical intrinsic transconductance. We show here that by simply reducing the contacts' resistance, it is possible to prepare a planar OECT with a high transconductance of 108 mS, which is close to the intrinsic transconductance of 121 mS. These values represent some of the highest ones reported so far, despite the fact that the poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS) used here has a lower conductivity.
Klíčová slova
Bioelectronics; organic electrochemical transistor (OECT); poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS); serial resistance; transconductance
Autoři
MARKOVÁ, A.; STŘÍTESKÝ, S.; WEITER, M.; VALA, M.
Vydáno
24. 7. 2023
Nakladatel
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Místo
PISCATAWAY
ISSN
1530-437X
Periodikum
IEEE SENSORS JOURNAL
Ročník
23
Číslo
17
Stát
Spojené státy americké
Strany od
19417
Strany do
19423
Strany počet
7
URL
BibTex
@article{BUT184414,
author="Aneta {Marková} and Stanislav {Stříteský} and Martin {Weiter} and Martin {Vala}",
title="Serial Resistance Effect on Organic Electrochemical Transistors Transconductance",
journal="IEEE SENSORS JOURNAL",
year="2023",
volume="23",
number="17",
pages="7",
doi="10.1109/JSEN.2023.3296939",
issn="1530-437X",
url="https://ieeexplore.ieee.org/document/10192544"
}