Detail publikace

Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires

Lancaster, S. Andrews, AM. Stoeger-Pollach, M. Steiger-Thirsfeld, A. Groiss, H. Schrenk, W. Strasser, G. Detz, H.

Originální název

Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Nanowires provide a platform for the integration of heterogeneous materials in III–V systems grown on Si. B x Ga 1−x As is an interesting material for strain applications, which has not yet been studied in nanowire form. The incorporation of boron in GaAs nanowires is investigated via DC-IV measurements. In transmission electron microscopy analysis a high concentration of boron is found at the nanowire edges, indicating surface segregation during growth. Nanowires grown under boron flux are found to exhibit Ohmic contacts and low contact resistances with p-type metallizations such as Au/Zn/Au or Cr/Au. Back-gated measurements confirmed the p-type behavior of such nanowires, indicating that boron is incorporated on antisite defects where it acts as a doubly-charged acceptor. This offers a new route for the inclusion of p-doped layers in GaAs-based nanowire heterostructures and the subsequent formation of Ohmic contacts.

Klíčová slova

B:GaAs, boron doping, molecular beam epitaxy, nanowires

Autoři

Lancaster, S. ; Andrews, AM.; Stoeger-Pollach, M. ; Steiger-Thirsfeld, A. ; Groiss, H.; Schrenk, W.; Strasser, G.; Detz, H.

Vydáno

1. 5. 2019

ISSN

0370-1972

Periodikum

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Ročník

256

Číslo

5

Stát

Spolková republika Německo

Strany od

1800368

Strany do

1800368

Strany počet

5

URL

https://onlinelibrary.wiley.com/doi/full/10.1002/pssb.201800368

BibTex

@article{BUT159148,
  author="Lancaster, S. and Andrews, AM. and Stoeger-Pollach, M. and Steiger-Thirsfeld, A. and Groiss, H. and Schrenk, W. and Strasser, G. and Detz, H.",
  title="Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires",
  journal="PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS",
  year="2019",
  volume="256",
  number="5",
  pages="1800368--1800368",
  doi="10.1002/pssb.201800368",
  issn="0370-1972",
  url="https://onlinelibrary.wiley.com/doi/full/10.1002/pssb.201800368"
}