Detail publikace

Quasi One-Dimensional Metal-Semiconductor Heterostructures

Benter, S. Dubrovskii, VG. Bartmann, M. Campo, A. Zardo, I. Sistani, M. Stoger-Pollach, M. Lancaster, S. Detz, H. Lugstein, A.

Originální název

Quasi One-Dimensional Metal-Semiconductor Heterostructures

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

The band offsets occurring at the abrupt heterointerfaces of suitable material combinations offer a powerful design tool for high performance or even new kinds of devices. Because of a large variety of applications for metal- semiconductor heterostructures and the promise of low-dimensional systems to present exceptional device characteristics, nanowire heterostructures gained particular interest over the past decade. However, compared to those achieved by mature two-dimensional processing techniques, quasi one-dimensional (1D) heterostructures often suffer from low interface and crystalline quality. For the GaAs-Au system, we demonstrate exemplarily a new approach to generate epitaxial and single crystalline metal-semiconductor nanowire heterostructures with atomically sharp interfaces using standard semiconductor processing techniques. Spatially resolved Raman measurements exclude any significant strain at the lattice mismatched metal-semiconductor heterojunction. On the basis of experimental results and simulation work, a novel self-assembled mechanism is demonstrated which yields one-step reconfiguration of a semiconductor-metal core-shell nanowire to a quasi 1D axially stacked heterostructure via flash lamp annealing. Transmission electron microscopy imaging and electrical characterization confirm the high interface quality resulting in the lowest Schottky barrier for the GaAs-Au system reported to date. Without limiting the generality, this novel approach will open up new opportunities in the syntheses of other metal-semiconductor nanowire heterostructures and thus facilitate the research of high-quality interfaces in metal-semiconductor nanocontacts.

Klíčová slova

Nanowire; GaAs; gold; metal-semiconductor heterostructure; quasi 1D contacts

Autoři

Benter, S.; Dubrovskii, VG.; Bartmann, M.; Campo, A.; Zardo, I. ; Sistani, M.; Stoger-Pollach, M.; Lancaster, S. ; Detz, H.; Lugstein, A.

Vydáno

1. 6. 2019

ISSN

1530-6992

Periodikum

Nano Letters

Ročník

19

Číslo

6

Stát

Spojené státy americké

Strany od

3892

Strany do

3897

Strany počet

6

URL

https://pubs.acs.org/doi/10.1021/acs.nanolett.9b01076

BibTex

@article{BUT159146,
  author="Benter, S. and Dubrovskii, VG. and Bartmann, M. and Campo, A. and Zardo, I. and Sistani, M. and Stoger-Pollach, M. and Lancaster, S. and Detz, H. and Lugstein, A.",
  title="Quasi One-Dimensional Metal-Semiconductor Heterostructures",
  journal="Nano Letters",
  year="2019",
  volume="19",
  number="6",
  pages="3892--3897",
  doi="10.1021/acs.nanolett.9b01076",
  issn="1530-6992",
  url="https://pubs.acs.org/doi/10.1021/acs.nanolett.9b01076"
}