Detail publikace
Diagnostics of the RF Plasma During Organosilicone Thin Layer Deposition
BRANDEJS, K., CIGANEK, M., KRČMA, F., RAŠKOVÁ, Z.
Originální název
Diagnostics of the RF Plasma During Organosilicone Thin Layer Deposition
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
Our work deals with the identification of the main spectral lines and bands measured during the plasma deposition using hexamethyldisiloxane (HMDSO) and tetravinylsilane (TVS) as monomers. The deposition processes were carried out in a pulsed regime with a variable relative pulse duration. At first, the pure monomers were used, furthermore, TVS was mixed in various ratios with oxygen. The changes in intensities and characters of spectra with an increasing of pulse duration and with an increasing of oxygen presence in the working gas mixture has been observed and they are different for some groups of the identified species. In the last part of experiment, exhaust gas was investigated by the gas-chromatography coupled with the mass spectrometry (GC-MS) technique. A new compound or fragment has been observed and the possible reaction schemes are given and briefly discussed.
Klíčová slova
optical emission spectroscopy, CG-MS, tetravinylsilane deposition, effective power
Autoři
BRANDEJS, K., CIGANEK, M., KRČMA, F., RAŠKOVÁ, Z.
Rok RIV
2005
Vydáno
17. 4. 2005
Nakladatel
Universite Jofeph Fouriere
Místo
Grenoble
Strany od
61
Strany do
61
Strany počet
1
BibTex
@inproceedings{BUT15350,
author="Kamil {Brandejs} and Zuzana {Rašková} and František {Krčma} and Miroslav {Ciganek}",
title="Diagnostics of the RF Plasma During Organosilicone Thin Layer Deposition",
booktitle="Proceedings of Frontiers in Low Temperature Plasma Diagnostics VI",
year="2005",
pages="61--61",
publisher="Universite Jofeph Fouriere",
address="Grenoble"
}