Detail publikace

Optical Properties of a-SiC:H Films Controlled by RF Power

BRÁNECKÝ, M. SCHMIEDOVÁ, V. ČECH, V.

Originální název

Optical Properties of a-SiC:H Films Controlled by RF Power

Typ

článek ve sborníku mimo WoS a Scopus

Jazyk

angličtina

Originální abstrakt

Plasma-enhanced chemical vapor deposition operated in two modes (continuous wave (10-70 W) and pulsed plasma (2-150 W)) was employed to prepare hydrogenated amorphous carbon-silicon (a-SiC:H) films from tetravinylsilane monomer. Optical properties of a-SiC:H films were analyzed by in situ phase modulated spectroscopic ellipsometer (UVISEL, Jobin-Yvon). The dispersion dependence of the dielectric function was fitted by the Tauc-Lorentz formula to determine the RF-power-dependent refractive index, extinction coefficient, and band gap.

Klíčová slova

PECVD, a-SiC:H, spectroscopic ellipsometry, tetravinylsilane

Autoři

BRÁNECKÝ, M.; SCHMIEDOVÁ, V.; ČECH, V.

Vydáno

16. 12. 2017

Nakladatel

MATFYZPRESS

Místo

Prague

ISBN

978-80-7378-356-3

Kniha

WDS 2017 - Proceeding of Contributed Papers - Physics

Číslo edice

1

Strany od

137

Strany do

142

Strany počet

144

URL

https://www.mff.cuni.cz/veda/konference/wds/proc/proc-contents.php?year=2017

BibTex

@inproceedings{BUT144160,
  author="Martin {Bránecký} and Veronika {Schmiedová} and Vladimír {Čech}",
  title="Optical Properties of a-SiC:H Films Controlled by RF Power",
  booktitle="WDS 2017 - Proceeding of Contributed Papers - Physics",
  year="2017",
  number="1",
  pages="137--142",
  publisher="MATFYZPRESS",
  address="Prague",
  isbn="978-80-7378-356-3",
  url="https://www.mff.cuni.cz/veda/konference/wds/proc/proc-contents.php?year=2017"
}