Detail publikace
Modeling of Plasmon-Enhanced Photoluminescence of Si Nanocrystals Embedded in Thin Silicon-Rich Oxinitride Layer
ÉDES, Z. KŘÁPEK, V. ŠIKOLA, T.
Originální název
Modeling of Plasmon-Enhanced Photoluminescence of Si Nanocrystals Embedded in Thin Silicon-Rich Oxinitride Layer
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
Plasmon-enhanced photoluminescence of silicon nanocrystals embedded in silicon-rich oxinitride thin film is calculated using finite-difference time-domain simulations. Emitters are represented as point-like dipoles and the photoluminescence enhancement is calculated depending on the emitter’s position and polarization with respect to the plasmonic metal nanoparticle placed on top of the layer. We show that the photoluminescence enhancement is dominated by the excitation enhancement even for tuning the metal nanoparticle size to the emission wavelength.
Klíčová slova
Plasmon Enhancement; Photoluminescence; SRON
Autoři
ÉDES, Z.; KŘÁPEK, V.; ŠIKOLA, T.
Vydáno
15. 1. 2016
ISSN
0587-4246
Periodikum
ACTA PHYSICA POLONICA A
Ročník
129
Číslo
1A
Stát
Polská republika
Strany od
A70
Strany do
A72
Strany počet
3
URL